M Sc Physics, University Muenster, Germany
Fam has over 20 years experience in the semiconductor industry. He was a member of the thin
film R&D group in the University of Kassel, Germany. His work included the characterisation and
optimisation of PECVD-SiO2 on Indium Phosphide.
At ST Microelectronics, he was involved in the MOS technology transfer project from A Grate, Italy
in 1987.He was promoted to be the manager of Ion Implantation Department, a centralised division
to support all three production lines.
In 1990 Fam joined ITT Intermetall (Micronas), Freiburg, Germany as a process engineer in the
Etch and Implant department. He was actively involved with the 0.5 micron CMOS development and
was promoted to section manager at the Ion Implantation department.
Fam was invited back by the Ministry of Science and Technology in 1997 to start up the R&D
fabrication at MIMOS, in collaboration with FhG Duisburg, Germany and NTT, Japan.